Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-07
2011-06-07
Le, Thao (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C136S249000, C257S103000
Reexamination Certificate
active
07955965
ABSTRACT:
The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
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Little Roger G.
Moe James G.
Wojtczuk Steven J.
Engellemmer Thomas J.
Le Thao
Mollaaghababa Reza
Nutter & McClennen & Fish LLP
Spire Corporation
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