Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1997-01-17
1999-07-13
Housel, James C.
Etching a substrate: processes
Etching of semiconductor material to produce an article...
430 5, 355 71, G03F 900, G03F 700
Patent
active
059222140
ABSTRACT:
A method for fabricating thin film nanostructures is provided. A layer of material on a substrate is mechanically displaced using an atomic force microscopy tip. The displacement is carried out in a fluid containing molecules which rapidly enter the void created by the AFM tip and bind to the clean substrate surface. These molecules are spatially confined in the void created by the displacement and form inlaid structures within the surrounding material. The surrounding material can be removed to create islands of the new material. The method is particularly adapted for use in fabricating nanometer-scale microelectronic devices.
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Liu Gang-yu
Xu Song
Housel James C.
Portner Ginny Allen
Wayne State University
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