Nanolayer thick film processing system and method

Details Nanolayer thick film processing system and method Nanolayer thick film processing system and method

2007-06-26

2007-06-26

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S758000, C257SE21001

Reexamination Certificate

active

10790652

ABSTRACT:
A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.

REFERENCES:
patent: 4918031 (1990-04-01), Flamm et al.
patent: 5902563 (1999-05-01), Pinneo
patent: 5961793 (1999-10-01), Ngan
patent: 6613656 (2003-09-01), Li
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2002/0170677 (2002-11-01), Tucker et al.

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