Nanoimprint resist

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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Details

C216S041000, C216S058000, C264S129000, C264S219000, C264S239000

Reexamination Certificate

active

07431858

ABSTRACT:
The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim1is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2plasma; vii) the bottom coat is plasma etched, preferably with O2plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.

REFERENCES:
patent: 4557797 (1985-12-01), Fuller et al.
patent: 6440864 (2002-08-01), Kropewnicki et al.
patent: 6954275 (2005-10-01), Choi et al.
patent: 2003/0099897 (2003-05-01), Fedynyshyn
Haoying Li et al. (Journal of Nanoparticle Research, 3 (2001), pp. 157-160).

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