Nanogaps: methods and devices containing same

Details Nanogaps: methods and devices containing same Nanogaps: methods and devices containing same

2006-03-21

2011-10-18

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE23145

Reexamination Certificate

active

08039368

ABSTRACT:
Disclosed are methods of fabricating nanogaps and various devices composed of nanogaps. The nanogap devices disclosed herein can be used as in a number of electronic, photonic and quantum mechanical devices, including field-effect transistors and logic circuits.

REFERENCES:
patent: 6159620 (2000-12-01), Heath et al.
patent: 6586787 (2003-07-01), Shih et al.
patent: 6635494 (2003-10-01), Yamashita
patent: 6744065 (2004-06-01), Samuelson et al.
patent: 6791338 (2004-09-01), Bratkovski et al.
patent: 6815218 (2004-11-01), Jacobson et al.
patent: 7030452 (2006-04-01), Tao et al.
patent: 7049625 (2006-05-01), Kern et al.
patent: 7067341 (2006-06-01), Mascolo et al.
patent: 7494907 (2009-02-01), Brown et al.
patent: 7615776 (2009-11-01), Chaudhari
patent: 2001/0006844 (2001-07-01), Park et al.
patent: 2001/0024845 (2001-09-01), Oszustowicz
patent: 2003/0034486 (2003-02-01), Korgel
patent: 2003/0040173 (2003-02-01), Fonash et al.
patent: 2003/0067668 (2003-04-01), Feldheim et al.
patent: 2003/0103367 (2003-06-01), Aeppli et al.
patent: 2004/0002195 (2004-01-01), Brousseau, III
patent: 2004/0029050 (2004-02-01), Brenner et al.
patent: 2004/0169195 (2004-09-01), Song
patent: 2006/0234417 (2006-10-01), Isobe et al.
patent: WO 200407636 (2004-01-01), None
May et al., “Photolithography”, The Virtual Cleanroom Project, http://www.ece.gatech.edu/research/labs/vc/processes/photoLith.html, accessed on Aug. 9, 2010, 14 pages.
Berggren et al., “Demonstration of a Nanolithographic Technique Using a Self-Assembled Monolayer Resist for Neutral Atomic Cesium”, Advanced Materials, Jan. 1997, 9(1), 52-55.
Bezryadin et al., “Nanofabrication of Electrodes With sub-5 nm Spacing for Transport Experiments on Single Molecules and Metal Clusters”, Scl Technol., B, May 1997, 15(4), 793-799.
Broers et al., “Electron-beam fabrication of 80-A metal structures”, App. Phys. Lett., Nov. 1976, 29(9), 596-598.
Broers, “Resolution limits for electron-beam lithography”, IBM J. of Res. Develop., Jul. 1988, 32(4), 502-513.
Cartlidge, “Atom lithography sees the light”, PhysicsWeb, Oct. 1, 2002, http://physicsweb.Org/articles
ews/6/10/2/l, 1 page.
Chang, “Proximity effect in electron-beam lithography”, J. Vac. Sd. Technol. B., Nov. 1975, 12(6), 1271-1275.
Chen et al., “Large on-off rations and negative differential resistance in a molecular electronic device”, Science, New Series, Nov. 19, 1999, 286(5444), 1550-1552.
Cui et al., “Overview of greyscale photolithography for microoptical elements fabrication”, Source: Proceedings of the SPIE—The International Society for Optical Engineering, Jan. 17, 2003, 4984, 111-117.
Grant et al., “Transmission electron microscopy ‘windows’ for nanofabricated structures”, Nanotechnol., Jul. 16, 2004, 15(9), 1175-1181.
Johnson et al., “Localization of Metastable Atom Beams With Optical Standing Waves: Nanolithography at the Heisenberg Limit”, Science, Jun. 5, 1998, 280(5369), 1583-1586.
Klein et al., “A single-electron transistor made from cadmium selenide nanocrystal”, Nature, Oct. 16, 1997, 389, 699-701.
Klein et al., “An approach to electrical studies of single nanocrystals”, hys. Lett., Apr. 29, 1996, 68(18), 2574-2576.
Koltsov, “Computer simulation of positive-resist photolithography”, Russian Res. Inst. of Microelectron Technology, Moscow, Russia, Smolyanitskii, LYa, Tsygankov, V.Yu, Source: Mikroelektronika, Jan.-Feb. 1995, 24(1), 52-62.
Krahne et al., “Fabrication of nanoscale gaps in integrated circuits”, J. Appl. Phys. Lett., Jul. 22, 2002, 81(4), 730-732.
Liu et al., “Simple fabrication scheme fro sub-10 nm electrode gaps using electron-beam lithography”, App. Phys. Lett., Feb. 2002, 80(5), 865-867.
Lutwyche, “The resolution of electron beam lithography”, Microelec. Eng., Mar. 1992, 17(1-4), 17-20.
Ma, “Making silicon nitride film a viable gate dielectric”, IEEE Trans. Electron Devices, Mar. 1998, 45(3), 680-690.
Mei, “High Integration in Microelectronics”, Proceedings of the First Workshop Conference: Microlithography, World Scientific, Rio de Janeiro, Brazil, Aug. 28-Sep. 1, 1989, 77-93.
Morkved et al., “Silicon nitride membrane substrates for the investigation of local structure in polymer thin films”, Polymer Communications, Elsevier Science Ltd., Jul. 1998, 39(16), 3871-3875.
Morpurgo et al., “Controlled fabrication of metallic electrodes with atomic separation”, App. Phys. Lett., Apr. 5, 1999, 74(14), 2084-2086.
Ouyang et al., “Reports Coherent Spin Transfer Between Molecularly Bridged Quantum Dots”, Science, Aug. 22, 2003, 301(5636), 1074-1078.
Pandey et al., “Growth and characterization of silicon nitride films for optoelectronics applications”, J. Opt. Mat., Nov. 2004, 27(2), 139-146.
Parikh et al., “Energy deposition functions in electron resist films on substrates”, J. Appl. Phys., Feb. 1979, 50(2), 1104-1111.
Park et al., “Nanomechanical oscillations in a single-C60transistors”, Nature, Sep. 7, 2000, 407(6800), 57-60.
Philipp et al., “Shadow evaporation method for fabrication of sub 10 nm Gaps between metal electrodes”, J. Microelec. Eng., May 1999, 46(1-4), 157-160.
Qin et al., “On-Wire lithography”, Science, Jul. 2005, 309(5731), 113-115.
Reed et al., “Conductance of a molecular junction”, Science, Oct. 10, 1997, 278(5336), 252-254.
Rehse et al., “Nanolithography with metastable neon atoms: Enhanced rate of contamination resist formation for nanostructure fabrication”, Appl. Phys. Lett., Sep. 1997, 71(10), 1427-1429.
Reyes-Betanzo et al., “Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures”, J. Vac. Sci. Technol. A, Jul. 2004, 22(4), 1513-1518.
Scott, “The theory of small-angle multiple scattering of fast charged particles”, Review of Mod. Phys., Apr. 1, 1963, 35(2), 231-313.
Service, “Quantum Dots Chemically Wired for Spintronics”, Science, Aug. 1, 2003, 301(5633), 580.
Sordan et al., “Coulomb blockade phenomena in electromigartion break junctions”, App. Phys. Lett., Jun. 29, 2005, 87, 013106-1-013106-3.
Strachen et al., “Controlled fabrication of nanogaps in ambient environment for molecular electronics”, App. Phys. Lett., Jan. 21, 2005, 86(4), 043109-1-043109-3.
Sun et al., “Shadow-Evaporated nanometer-sized gaps and their use in electrical studies of nanocrystals”, Nanotechnology, Mar. 9, 2005, 16(6), 631-634.
Taylor, “Materials and Processes at the Leading Edge of Photolithography”, Electronic Packaging Materials Science Symposium, Boston, MA, Nov. 30-Dec. 4, 1987, 108, 257-274.
Teng et al., “Materials and processes in microlithography for IC fabrication”, (Mater. Res. Labs., hid. Technol. Res. hist., Hsinchu, Taiwan); Source: MRL Bulletin of Research and Development, Sep. 1990, 4(2), 1-7.
Younkin et al., “Nanostructure fabrication in silicon using cesium to pattern a self-assembled monolayer”, Applied Physics Letters, Sep. 1, 1997, 71(9), 1261-1263.
Zandbergen et al., “Sculpting nanoelectrodes with a transmission electron beam for electrical and geometrical characterization of nanoparticles”, Nano. Lett., Mar. 2005, 5(3), 549-553.

Affiliated with

Also associated with

Rating

Nanogaps: methods and devices containing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanogaps: methods and devices containing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanogaps: methods and devices containing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4273383