Nanoelectronic structure and method of producing such

Details Nanoelectronic structure and method of producing such Nanoelectronic structure and method of producing such

2010-05-13

2011-11-29

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S268000, C438S503000, C438S584000

Reexamination Certificate

active

08067299

ABSTRACT:
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

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