Static information storage and retrieval – Systems using particular element – Molecular or atomic
Reexamination Certificate
2006-08-22
2006-08-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Molecular or atomic
C365S164000, C365S166000, C365S185210, C977S726000
Reexamination Certificate
active
07095645
ABSTRACT:
Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read if a charge is stored in the charge containment layer, a charge is formed on the beam. If a charge is stored then forces between the charged beam and the charge containment layer will displace the free-moving portion of the beam. This movement may be sensed by a sense contact.Alternatively, the beam may contact a sense contact at an ambient frequency when no charge is stored. Changing the amount of charge stored may change this contact rate. The contract rate may be sensed to determine the amount of stored charge.
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Mullen Jeffrey D.
Pinkerton Joseph F.
Ambient Systems, Inc.
Fish & Neave IP Group of Ropes & Gray LLP
Hur J. H.
Morris Robert W.
Mullen Jeffrey D.
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