Nanocrystal quantum dot memory devices

Static information storage and retrieval – Systems using particular element – Molecular or atomic

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S111000, C977S943000

Reexamination Certificate

active

07813160

ABSTRACT:
Memory devices and recordable media are disclosed that take advantage of memory effects in the electronic transport in CdSe nanocrystal (NC) quantum dot arrays. Conduction through a NC array can be reduced with a negative voltage and then restored with a positive voltage. Light can also be used to restore or even increase the NC array conduction. The switching of the conduction in CdSe NC arrays and found the behavior to be highly sensitive to the value and duration of the laser and voltage pulses.

REFERENCES:
patent: 6322901 (2001-11-01), Bawendi et al.
patent: 6744960 (2004-06-01), Pelka
patent: 7301172 (2007-11-01), Atwater et al.
patent: 2002/0163830 (2002-11-01), Bulovic et al.
patent: 2004/0043583 (2004-03-01), Rao et al.
patent: 2004/0256662 (2004-12-01), Black et al.
patent: 2005/0045867 (2005-03-01), Ozkan et al.
patent: 2008/0017845 (2008-01-01), Drndic et al.
patent: WO2004/078027 (2004-09-01), None
Hess et al., “Surface Transformation and Photoinduced Recovery in CdSe Nanocrystals,” Physical Review Letters vol. 86 No. 14, pp. 3132-3135.
Drndic, M., et al., “Transport properties of annealed CdSe colloidal nanocrystal solids,” J. Appl. Phys., 2002, 92(12), 7498-7503.
Fischbein, M.D., et al., “CdSe nanocrystal quantum dot memory,” Applied Physics Letts., 2005, 86, 193106-1-193106-3.
Ginger, D.S., et al., “Charge injection and transport in films of CdSe nanocrystals,” J.Appl. Phys., 2000, 87(3), 1361-1368.
Greene, K., “Quantum hardware,” 2005, http://www.technologyreview.com/InfoTech/wtr—16063, 294,p2.html?PM-GO, downloaded from the internet on Dec. 19, 2005, 3 pages.
Huang, Q., et al., “Synthesis and characterization of CdS/multiwalled carbon nanotube heterojunctions,” Nanotechnology, 15, 1855-1860.
Kalaugher, L., “Nanoparticles boost solar cells,” 2005, http://www.nanotechweb.org/articles
ews/4/10/13/1, downloaded from the internet on Oct. 25, 2005, 2 pages.
Klein, D.L., et al., “A single-electron transistor made from a cadmium selenide nanocrystal,” Nature, 1997, 389, 699-701.
Lankhorst, M.H.R., et al., “Low-cost and nanoscale non-volatile memory concept for future silicon chips,” Nature, 2005, 1-6.
Mattoussi, H., et al., “Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals,” Journal of Applied Physics, 83(12), 7965-7974 (abstract).
Mattoussi, H., et al., “Composite thin films of CdSe nanocrystals and a surface passivating/electron transporting block copolymer: correlations between film microstructure by transmission electron microscopy and electroluminescence,” Journal of Applied Physics, 1999, 86(8), 4390-4399 (abstract).
Morgan, N.Y., et al., “Electronic transport in films of colloidal CdSe nanocrystals,” Phys. Rev. B, 2002, 66, 075339-1-075339-9.
Novikov, D.S., et al., “Anomalous transport in quantum dot arrays,” Cond. Mat. Phys. (preprint), 2003, arXiv:cond-mat/0307031 v1, 1-5.
Romero, H.E., et al., “Transport phenomena in colloidal PbSe nanocrystal quantum-dot solids,” Depart. Of Physics & Astronomy, University of Pennsylvania, 2005, 5 pages.
Schlamp, M.C., et al., “Improved efficiencies in light emitting diodes made with CdSe(CdS) core/shell type nanocrystals and a semiconducting polymer,” J. of Applied Physics, 1997, 82(11), 5837-5842 (abstract).
Song, A.M., et al., “Nanometer-scale two-terminal semiconductor memory operating at room temperature,” Applied Physics Letts, 2005, 86, 042106-042106-3.
Talapin, D.V., et al., “PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors,” Science Magazine, 2005, 86-89 (abstract).
Walters, R.J., et al., “Silicon optical nanocrystal memory,” Applied Physics Letts, 2004, 85(13), 2622-2624.
Woo, W., et al., “Reversible charging of CdSe nanocrystals in a simple solid-state device,” Adv. Mater., 2002, 14(15), 1068.
Yu, D., et al., “Variable range hopping conduction in semiconductor nanocrystal solids,” Phys. Rev. Lett., 2004, 92(21), 216801-1-216802-4.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nanocrystal quantum dot memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanocrystal quantum dot memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanocrystal quantum dot memory devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4238909

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.