Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2006-05-23
2006-05-23
Lee, Sin (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S280100, C430S905000, C430S910000, C430S914000, C430S921000, C430S925000, C430S942000, C430S966000, C430S302000, C430S325000, C430S326000, C526S287000, C526S279000
Reexamination Certificate
active
07049044
ABSTRACT:
The present invention provides new high resolution nanocomposite resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite negative resists comprising a photoacid generating component, a styrene component, and an optional polyhedral oligosilsequioxane component are provided. Negative resists of this invention may also contain an optional methacrylate component. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.
REFERENCES:
patent: 4717513 (1988-01-01), Lewis et al.
patent: 5780201 (1998-07-01), Sabnis et al.
patent: 6232034 (2001-05-01), Kasai et al.
patent: 6238541 (2001-05-01), Sasaki et al.
patent: 6306556 (2001-10-01), Matsuo et al.
patent: 6420084 (2002-07-01), Angelopoulos et al.
patent: 6884562 (2005-04-01), Schadt, III et al.
patent: 2002/0182541 (2002-12-01), Gonsalves
patent: 0 473 547 (1991-08-01), None
patent: 6-228086 (1994-08-01), None
Chem. Abstract (AN 1992:408654)—English abstract for EP 473547 (Steinmann et al).
Chem. Abstract (AN 1995:198693)—English abstract for JP 06-228086 (Muraoka et al).
JPO Abstract—English abstract for JP 06-228086 (Muraoka et al).
Full, formal English translation of JP 6-228086 of JP 6-228086 (Muraoka et al), provided by PTO.
Chem. Abstract 119:96450—English abstract for JP 5-086133 (Akashi et al).
Brainard, Robert L., et al., “Resists for next generation lithography,” Microelectronic Engineering (2002), article in press.
Canning, John, “Next generation Lithography: When, why, and at what cost?” Microelectronic Engineering (2002), article in press, abstract only.
Gonsalves, Kenneth E., et al., “Combinatorial approach for the synthesis of terpolymers and their novel application as very-high-contrast resists for x-ray nanolithography,” J. Vac. Sci. Technol. B 18(1), Jan./Feb. 2000, pp. 325-327.
Hu, Younqi, et al., “Nanocomposite resists for electron beam nanolithography,” Microelectronic Engineering 56 (2001), pp. 289-294.
Merhari, L., et al., “Nanocomposite resist systems for next generation lithography,” Microelectronic Engineering (2002), article in press.
Saito, Satoshi, et al., “A new positive electron-beam resist material composed of catechol derivatives,” Microelectronic Engineering (2002), article in press.
Wu, Hengpeng, et al., “Preparation of a Photoacid Generating Monomer and Its Application in Lithography,” Advanced Functional Materials, 11(4), Aug. 2001, pp. 271-276.
Wu, Hengpeng, et al., “A Novel Single-Component Negative Resist for DUV and Electron Beam Lithography,” Advanced Materials, 13(3), Feb. 2001, pp. 195-197.
Wu, Henpeng, et al., “Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance,” J. Vac. Sci. Technol. B 19(3), May/Jun. 2001, pp. 851-855.
Wu, Henpeng, “Synthesis and Characterization of Radiation-sensitive Polymers and Their Application in Lithography,” Ph.D. dissertation, University of Connecticut, Apr. 2001.
Ali Mohammed Azam
Gonsalves Kenneth
Kilpatrick & Stockton LLP
Lee Sin
The University of North Carolina at Charlotte
Wimbish J. Clinton
LandOfFree
Nanocomposite negative resists for next generation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nanocomposite negative resists for next generation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanocomposite negative resists for next generation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3633956