Nanocircuit and self-correcting etching method for...

Details Nanocircuit and self-correcting etching method for... Nanocircuit and self-correcting etching method for...

2006-04-11

2006-04-11

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S947000

Reexamination Certificate

active

07026247

ABSTRACT:
A self-correcting etching (SCORE) process for fabricating microstructure is provided. The SCORE process of the present invention is particularly useful for reducing preselected features of a hard mask without degrading the variation of the critical dimension (CD) within each wafer. Alternatively, the CD variation of the hard mask features' produced during printing can be substantially reduced by applying SCORE. Hence, ultra-sub-lithographic features (e.g., nanostructures) can be reliably fabricated. Consequently, the method of the present invention can be used to increase the circuit performance, while improving the manufacturing yield.

REFERENCES:
patent: 4312680 (1982-01-01), Hsu
patent: 6025273 (2000-02-01), Chen et al.
patent: 2002/0074313 (2002-06-01), Hu et al.

Affiliated with

Also associated with

Rating

Nanocircuit and self-correcting etching method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanocircuit and self-correcting etching method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanocircuit and self-correcting etching method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3543993