Nano tube cell, and semiconductor device having nano tube...

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Reexamination Certificate

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C365S149000, C365S151000, C257S046000

Reexamination Certificate

active

07110291

ABSTRACT:
The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top sub cell arrays, a plurality of bottom sub cell arrays, a main bit line sense amp and a word line driving unit. Especially, the top and bottom sub cell arrays have a double bit line sensing structure for inducing a sensing voltage of a main bit line by controlling a volume of a current supplied from a power voltage to the main bit line according to a sensing voltage of a sub bit line receiving a cell data. Each of the sub cell arrays includes a capacitor, and a PNPN nano tube cell having a PNPN diode switch selectively turned on/off according to a voltage difference between one side terminal of the capacitor and the sub bit line, to decrease a cell size and improve operational characteristics of the circuit.

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