Nano tube cell and memory device using the same

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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Details

C365S149000, C365S151000, C257S046000

Reexamination Certificate

active

11058218

ABSTRACT:
A nano tube cell and a memory device using the same features a cross point cell using a capacitor and a PNPN nano tube switch to reduce the whole memory size. In the memory device, the unit nano tube cell comprising a capacitor and a PNPN nano tube switch which does not an additional gate control signal is located where a word line and a bit line are crossed, so that a cross point cell array is embodied. As a result, the whole chip size is reduced, and read and write operations are effectively improved.

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patent: 1020050079368 (2005-10-01), None

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