Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2008-04-01
2008-04-01
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S149000, C365S151000, C257S046000
Reexamination Certificate
active
07352617
ABSTRACT:
A nano tube cell and a memory device using the same features a cross point cell using a capacitor and a PNPN nano tube switch to reduce the whole memory size. In the memory device, the unit nano tube cell comprising a capacitor and a PNPN nano tube switch which does not an additional gate control signal is located where a word line and a bit line are crossed, so that a cross point cell array is embodied. As a result, the whole chip size is reduced, and read and write operations are effectively improved.
REFERENCES:
patent: 4066915 (1978-01-01), Ohhinata
patent: 4677455 (1987-06-01), Okajima
patent: 4882706 (1989-11-01), Sinclair
patent: 5930162 (1999-07-01), Peterson
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6824908 (2004-11-01), Yamaura et al.
patent: 7173843 (2007-02-01), Kang
patent: 2002/0006539 (2002-01-01), Kubota et al.
patent: 2004/0234841 (2004-11-01), Yoshitake et al.
patent: 2005/0040048 (2005-02-01), Kim et al.
patent: 2005/0135140 (2005-06-01), Kang
patent: 2005/0152174 (2005-07-01), Kang
patent: 2005/0254284 (2005-11-01), Kang
patent: 1020050079368 (2005-10-01), None
Hoang Huan
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
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