Nano-structure and method of manufacturing nano-structure

Details Nano-structure and method of manufacturing nano-structure Nano-structure and method of manufacturing nano-structure

2006-01-03

2006-01-03

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S688000, C438S745000, C438S760000, C257S009000, C977S726000

Reexamination Certificate

active

06982217

ABSTRACT:
A structure having projections is provided. The structure having projections comprises a first projection formed on a first layer containing a first material, and a plurality of second projections formed around the first projection and containing a material capable of being subjected to anodic oxidation.

REFERENCES:
patent: 6130118 (2000-10-01), Yamazaki
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6475924 (2002-11-01), Yamamoto et al.
patent: 6476409 (2002-11-01), Iwasaki et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 6713364 (2004-03-01), Kirchhoff
patent: 6717777 (2004-04-01), Den et al.
patent: 6737668 (2004-05-01), Den et al.
patent: 6790787 (2004-09-01), Iwasaki et al.
patent: 6-32675 (1994-02-01), None
patent: 11-268483 (1999-10-01), None
patent: 2000-195036 (2000-07-01), None
patent: 2000-266773 (2000-09-01), None
Jessensky et al., “Self-organized Formation of Hexgonal Pore Arrays In Anodic & Aluminum,” Appl. Phys. Lett., vol. 72, No. 10., pp. 1173-1175.
H. Masuda et al., “Preparation of Porous Material by Replacing Microstructure of Auodic Aluminum Film With Metal” Chemistry Letters, pp. 621-622 (1990).
S. Shingubara et al., “Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nano holes of Anodically Oxidized Aluminum,” Jpn. J. Appl. Phys., vol. 36, part I No. 12B.
H. Asoh et al. “Fabrication of ideally ordered anodic porous alumina with 63 nm hole periodicity using sulfuric acid,” J. Vac., Sci Technol. B 19(2) pp. 569-572 (2001).

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