Method and system for determining optimum optical proximity...

Details Method and system for determining optimum optical proximity... Method and system for determining optimum optical proximity...

2006-01-03

2006-01-03

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C382S144000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

06982136

ABSTRACT:
For determining optimum optical proximity corrections (OPCs) for a mask pattern, mask areas are formed on a reticle with each mask area having the mask pattern of polygons that are modified with respective OPCs perturbations. A respective patterned area is fabricated on a semiconductor wafer from each mask area of the reticle. A respective microscopy image of each respective patterned area is generated to determine a respective error function for each mask area by comparing a desired image of the mask pattern and the respective microscopy image. The optimum OPCs are determined as the respective OPCs perturbations corresponding to one of the mask areas having the respective error function that is a minimum of the mask areas.

REFERENCES:
patent: 5994009 (1999-11-01), Tzu et al.
patent: 6243855 (2001-06-01), Kobayashi et al.

Affiliated with

Also associated with

Rating

Method and system for determining optimum optical proximity... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for determining optimum optical proximity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for determining optimum optical proximity... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3579641