Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2005-09-06
2005-09-06
Zarneke, David (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C435S105000, C435S091500, C435S091500, C435S091500, C435S268000, C435S931000, C435S965000
Reexamination Certificate
active
06939748
ABSTRACT:
A method is disclosed for making a nano-size semiconductor component within a wide-bandgap semiconductor substrate. A first thermal energy beam is directed onto a first portion of the wide-bandgap semiconductor substrate to change the structure of the wide-bandgap semiconductor substrate into a first element of the semiconductor component. A second thermal energy beam is directed onto a second portion of the wide-bandgap semiconductor substrate adjacent to the first portion to form a second element of the semiconductor component.
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Anya Igwe U.
Frijouf Rust & Pyle P.A.
Zarneke David
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