Nano-electronic memory array

Details Nano-electronic memory array Nano-electronic memory array

2007-10-04

2009-02-10

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Molecular or atomic

C257S005000, C257S202000, C257S204000, C257S211000, C257S109000

Reexamination Certificate

active

07489537

ABSTRACT:
A memory device includes an array of memory cells disposed in rows and columns and constructed over a substrate, each memory cell comprising a first signal electrode, a second signal electrode, and a nano-layer disposed in the intersecting region between the first signal electrode and the second signal electrode; a plurality of word lines each connecting the first signal electrodes of a row of memory cells; and a plurality of bit lines each connecting the second signal electrodes of a column of memory cells.

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