Nano-elastic memory device and method of manufacturing the same

Details Nano-elastic memory device and method of manufacturing the same Nano-elastic memory device and method of manufacturing the same

2006-08-18

2008-11-18

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Point contact device

C257S415000, C257SE51040, C977S742000, C977S743000

Reexamination Certificate

active

07453085

ABSTRACT:
A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

REFERENCES:
patent: 6558645 (2003-05-01), Nakayama et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6856002 (2005-02-01), Moore et al.
patent: 7268077 (2007-09-01), Hwang
patent: 7274035 (2007-09-01), Yang et al.
patent: 2005/0017370 (2005-01-01), Stasiak

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