Nano and MEMS power sources and methods thereof

Details Nano and MEMS power sources and methods thereof Nano and MEMS power sources and methods thereof

2011-05-03

2011-05-03

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S367000, C257SE27124, C438S022000, C438S039000

Reexamination Certificate

active

07936019

ABSTRACT:
A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.

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Rybicki, “Silicon Carbide Alphavoltaic Battery,”Proceedings of the 25th IEEE Photovoltaic Specialists Conferencepp. 93-96 (1996).

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