NAND-type nonvolatile semiconductor memory device

Details NAND-type nonvolatile semiconductor memory device NAND-type nonvolatile semiconductor memory device

2011-08-16

2011-08-16

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21690, C257SE27103

Reexamination Certificate

active

07999303

ABSTRACT:
The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor. The NAND-type nonvolatile semiconductor memory device has, on a semiconductor substrate, a plurality of memory cell transistors connected to each other in series and a select transistor. The memory cell transistor includes a first insulating film on the semiconductor substrate, a charge trapping layer, a second insulating film made of aluminum oxide,a first control gate electrode, and a first source/drain region. The select transistor includes a third insulating film on the semiconductor substrate, a fourth insulating film made of an aluminum oxide containing at least one of a tetravalent cationic element, a pentavalent cationic element, and N (nitrogen), a second control gate electrode, and a second source/drain region.

REFERENCES:
patent: 6809371 (2004-10-01), Sugiyama
patent: 6858906 (2005-02-01), Lee et al.
patent: 7129136 (2006-10-01), Sugiyama
patent: 7247538 (2007-07-01), Lee et al.
patent: 7253467 (2007-08-01), Lee et al.
patent: 7889557 (2011-02-01), Park et al.
patent: 7910430 (2011-03-01), Om et al.
patent: 2004/0251489 (2004-12-01), Jeon et al.
patent: 2005/0122775 (2005-06-01), Koyanagi et al.
patent: 2005/0128816 (2005-06-01), Lee et al.
patent: 2006/0180851 (2006-08-01), Lee et al.
patent: 2007/0063265 (2007-03-01), Lee et al.
patent: 2007/0296026 (2007-12-01), Jeon et al.
patent: 2008/0001212 (2008-01-01), Lee et al.
patent: 2008/0116507 (2008-05-01), Ino et al.
patent: 1 737 033 (2006-12-01), None
patent: 2003-68897 (2003-03-01), None
patent: 2003-282746 (2003-10-01), None
patent: 2004-55969 (2004-02-01), None
patent: 2004-158810 (2004-06-01), None
patent: 2005-5715 (2005-01-01), None
patent: 2005-328029 (2005-11-01), None
patent: 2008-130743 (2008-06-01), None
patent: 2009-81203 (2009-04-01), None
patent: 2009-239216 (2009-10-01), None
Y. Saito, et al., “Characterization of non-volatile memory using a thin aluminosilicate film as a charge trapping layer”, The Japan Society of Applied Physics, No. 2, 2006, 1 page.
Jang-Sik Lee, et al., “Data Retention Characteristics of MONOS Devices with High-kDielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory” Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, Kobe, 2005, pp. 200-201.
T. Nakagawa, et al., “Charge Trapping Characteristics of Two-layered AI203/SiO2 Stack for Non-volatile Memory Device”, Abstract No. G1.3, Materials Research Society, 2006, 2 pages.
Katsuyuki Matsunaga, et al, “First-principles study of defect energetics in titanium-doped alumina”, Physical Review B, vol. 68, 2003, 8 pages.
Katsuyuki Matsunaga, et al., “First-Principles calculations of intrinsic defects in Al2O3”, Physical Review B, vol. 68, 2003, 9 pages.
L. Manchanda, et al., “Gate Quality Doped High K Films for CMOS Beyond 100 nm: 3—10nm Al2O3with Low Leakage and Low Interface States”, IEEE, International Electron Device Meeting (IEDM), 1998, 4 pages.

Affiliated with

Also associated with

Rating

NAND-type nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NAND-type nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NAND-type nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2718807