Nand type non-volatile memory device and method for...

Details Nand type non-volatile memory device and method for... Nand type non-volatile memory device and method for...

2011-01-04

2011-01-04

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S390000, C257SE27103, C257SE29300

Reexamination Certificate

active

07863671

ABSTRACT:
A method for fabricating a NAND type flash memory device includes defining a select transistor region and a memory cell region in a semiconductor substrate, forming a tunnel insulating layer, a floating gate conductive layer, and a dielectric layer over a semiconductor substrate, etching the dielectric layer, thereby forming an opening exposing the floating gate conductive layer, forming a low resistance layer in the opening, forming a control gate conductive layer over the semiconductor substrate, and etching the control gate conductive layer, the dielectric layer, the floating gate conductive layer, and the tunnel insulating layer to form gate stacks of memory cells and source/drain select transistors.

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patent: 7145199 (2006-12-01), Kajimoto et al.
patent: 7183615 (2007-02-01), Yamashita et al.
patent: 2005/0082602 (2005-04-01), Okajima
patent: 2006/0231822 (2006-10-01), Kim
patent: 10-2004-0001998 (2004-01-01), None
patent: 10-2005-0094004 (2005-09-01), None
patent: 10-2006-0063559 (2006-06-01), None
patent: 10-2006-0088637 (2006-08-01), None

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