NAND-type magnetoresistive RAM

Details NAND-type magnetoresistive RAM NAND-type magnetoresistive RAM

2005-04-26

2005-04-26

Lebentritt, Michael S. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06885578

ABSTRACT:
The present invention generally relates to a NAND-type magnetoresistive RAM, and more specifically, to a NAND-type magnetoresistive RAM comprising a plurality of transistors connected in series as a NAND-type which can reduce the effective area per cell. Two or more NAND-type transistors sharing an adjacent source region and an adjacent drain region are connected in series, thereby reducing inactive regions. A read node connected to a bitline is shared by a plurality of transistors, thereby improving a read operation. As a result, the effective area per cell can be decreased, and the integration of a device can be improved.

REFERENCES:
patent: 6683807 (2004-01-01), Hidaka
patent: 6693822 (2004-02-01), Ito
patent: 6724653 (2004-04-01), Iwata et al.
patent: 6804144 (2004-10-01), Iwata

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