Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1995-05-22
1997-04-29
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Data refresh
365149, 365205, G11C 700
Patent
active
056256027
ABSTRACT:
A sense amplifier is connected between memory cell arrays, a re-writing register is arranged in position adjacent to the sense amplifier, transfer gates are disposed between the sense amplifier and the memory cell arrays, transfer gates are provided between bit lines of the memory cell arrays and global bit lines, and a gate control circuit for controlling the transfer gates is provided. When readout data is written into the register, the node of the sense amplifier is electrically separated from the bit lines and global bit lines.
REFERENCES:
patent: 4616343 (1986-10-01), Ogawa
patent: 4648073 (1987-03-01), Kenney
patent: 4858190 (1989-08-01), Yamaguchi et al.
patent: 4947373 (1990-08-01), Yamaguchi et al.
patent: 5111386 (1992-05-01), Fujishima et al.
patent: 5274585 (1993-12-01), Suyama et al.
patent: 5299157 (1994-03-01), Kimura et al.
patent: 5299165 (1994-03-01), Kimura et al.
patent: 5341326 (1994-08-01), Takase et al.
patent: 5369612 (1994-11-01), Furuyama
1993 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, vol. 36, pp. 46-47, Takehiro Hasegawa, et al., "An Experimental DRAM With a NAND-Structured Cell".
1991 IEEE International Solid-State Circuits Conference Digest of Technical Papers, vol. 34, TA 6.2, pp. 106-107; 297, Katsutaka Kimura, et al., "A Block-Oriented RAM with Half Sized DRAM cell and Quasi-Folded Data-Line Architecture".
Hasegawa Takehiro
Masuoka Fujio
Ogiwara Ryu
Oowaki Yukihito
Shiratake Shinichiro
Kabushiki Kaisha Toshiba
Nelms David C.
Tran Andrew Q.
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