Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-01-25
2011-01-25
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S158000
Reexamination Certificate
active
07876597
ABSTRACT:
A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells is in parallel with a corresponding series of control gates. A select gate is also in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell includes turning off the corresponding control gate, while turning on all other control gates. Devices include the variable-resistance material memory array.
REFERENCES:
patent: 5923587 (1999-07-01), Choi
patent: 6961258 (2005-11-01), Lowrey
patent: 6992365 (2006-01-01), Xu et al.
patent: 7002837 (2006-02-01), Morimoto
patent: 7583528 (2009-09-01), Aoki
patent: 2002/0097598 (2002-07-01), Hoenigschmid
patent: 2004/0125646 (2004-07-01), Durlam et al.
patent: 2004/0174732 (2004-09-01), Morimoto
patent: 2005/0248978 (2005-11-01), Chen et al.
patent: 2005/0266634 (2005-12-01), Park et al.
patent: 2006/0145240 (2006-07-01), Park et al.
patent: 2006/0231887 (2006-10-01), Kim et al.
patent: 2006/0284237 (2006-12-01), Park et al.
patent: 2007/0121369 (2007-05-01), Happ
patent: 2008/0185571 (2008-08-01), Happ et al.
patent: 2009/0072341 (2009-03-01), Liu et al.
patent: 1696441 (2006-08-01), None
patent: 00236078 (2000-08-01), None
patent: WO-2009038780 (2009-03-01), None
Beckett, Paul, “Towards a Reconfigurable Nanocomputer Platform”,Proc. of the 7th Asia-Pacific Computer Systems Architectures Conference(ACSAC). Melbourne, Australia: ACS, (Jan. 2002), 1-8.
Cho, Woo Yeong, et al., “A 0.18-um 3.0- V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM)”,IEEE Journal of Solid-State Circuits, 40(1), (Jan. 2005), 293-300.
Hwang, Y. N., “Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology”,IEEE 2003 International Symposium on VLSI Technology, Systems, and Applications, (2003), 29-31.
Matsuzaki, N., et al., “Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations”,IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest., (2005), 738-741.
Oh, J. H., et al., “Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”,IEEE International Electron Devices Meeting, 2006. IEDM '06., (2006), 1-4.
King Douglas
Micro)n Technology, Inc.
Nguyen Vanthu
Schwegman Lundberg & Woessner, P.A.
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