NAND memory arrays

Details NAND memory arrays NAND memory arrays

2008-09-02

2008-09-02

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S257000, C438S266000, C438S211000

Reexamination Certificate

active

10692430

ABSTRACT:
Methods and apparatus are provided. A source slot and a drain contact region are formed at opposite ends of a NAND string disposed on a substrate of a NAND memory array using a single mask. The drain contact region is self-aligned to a drain select gate. The NAND string has a plurality of memory cells connected in series.

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