NAND flash memory devices having shielding lines between...

Details NAND flash memory devices having shielding lines between... NAND flash memory devices having shielding lines between...

2009-01-22

2010-10-26

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185190, C365S185170

Reexamination Certificate

active

07821825

ABSTRACT:
A method of programming a flash memory includes applying a shielding voltage to at least one shielding line, which is interposed between a plurality of wordlines and a selection line and operable to reduce capacitance-coupling between the wordline and the selection line during the programming operation, and applying a program voltage to memory cells through one of the wordlines.

REFERENCES:
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6151249 (2000-11-01), Shirota et al.
patent: 6373746 (2002-04-01), Takeuchi et al.
patent: 6845042 (2005-01-01), Ichige et al.
patent: 7079437 (2006-07-01), Hazama et al.
patent: 7239556 (2007-07-01), Abe et al.
patent: 7272049 (2007-09-01), Kang et al.
patent: 7301815 (2007-11-01), Kurata et al.
patent: 7310280 (2007-12-01), Park et al.
patent: 2005/0180186 (2005-08-01), Lutze et al.
patent: 2006/0239077 (2006-10-01), Park et al.
patent: 2007/0147119 (2007-06-01), Pham et al.
patent: 10-1998-025698 (1998-07-01), None

Affiliated with

Also associated with

Rating

NAND flash memory devices having shielding lines between... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NAND flash memory devices having shielding lines between..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NAND flash memory devices having shielding lines between... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4187634