NAND flash memory devices having shielding lines between...

Details NAND flash memory devices having shielding lines between... NAND flash memory devices having shielding lines between...

2006-05-11

2009-02-03

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185190, C365S185170, C365S185050, C365S053000

Reexamination Certificate

active

07486554

ABSTRACT:
A NAND flash memory having a cell string structure includes a wordline configured to transfer a wordline voltage to a memory cell. A selection line is configured to transfer a selection voltage to a selection transistor connected to the memory cell and at least one shielding line is interposed between the wordline and the selection line and is operable to reduce capacitance-coupling between the wordline and the selection line during a programming operation.

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