Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-04-07
2008-11-25
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185080, C365S185220, C365S189050, C365S185170, C365S185240
Reexamination Certificate
active
07457157
ABSTRACT:
Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register.
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Notice to File a Response/Amendment to the Examination Report, with English language translation, KR Application No. 10-2005-0062787, Aug. 29, 2006.
Hur J. H.
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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