NAND flash memory device and method of manufacturing the same

Details NAND flash memory device and method of manufacturing the same NAND flash memory device and method of manufacturing the same

2006-06-02

2008-11-25

Nguyen, Dao H. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE21690, C257SE21385, C257SE21419, C365S185050, C365S230060, C438S257000

Reexamination Certificate

active

07456466

ABSTRACT:
A NAND flash memory device and method of manufacturing the same is disclosed. Source and drain select transistor gates are recessed lower than an active region of a semiconductor substrate. A valid channel length of the source and drain select transistor gates is longer than a channel length of memory cell gates. Accordingly, an electric field between a source region and a drain region of the select transistor can be reduced. It is thus possible to prevent program disturbance from occurring in edge memory cells adjacent to the source and drain select transistors in non-selected cell strings.

REFERENCES:
patent: 6888190 (2005-05-01), Yang et al.
patent: 7180121 (2007-02-01), Hieda
patent: 2004/0079988 (2004-04-01), Harari
patent: 2005/0090052 (2005-04-01), Matsui et al.
patent: 2006/0023558 (2006-02-01), Cho et al.
patent: 2006/0027855 (2006-02-01), Hur et al.
patent: 2002-176114 (2002-06-01), None

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