Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2008-08-11
2009-08-11
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S185130, C365S230030
Reexamination Certificate
active
07573752
ABSTRACT:
A flash memory device, such as a NAND flash, is described having an array of floating gate transistor memory cells arranged in a first and second addressable blocks. A voltage source to supply programming voltages to control gates of the floating gate transistor memory cells is provided. The voltage source supplies a pre-charge voltage to the control gates of the floating gate transistor memory cells located in the first addressable block when data is programmed in memory cells of the second addressable block. Methods for pre-charging word lines in unselected array blocks are included.
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Micro)n Technology, Inc.
Nguyen Tuan T.
Schwegman Lundberg & Woessner, P.A.
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