Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-07-12
2011-07-12
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185170, C365S185180, C365S185230, C365S185270, C365S185290, C365S185330
Reexamination Certificate
active
07978517
ABSTRACT:
A NAND flash memory that is read while a selected bit line and a non-selected bit line are adjacent to each other, has a memory cell array having a plurality of blocks each of which is composed of a plurality of memory cell units, each of the memory cell units having a plurality of electrically rewritable memory cells that are connected to each other, wherein a bit line that is selected by a sense amplifier is charged in a state where a drain-side select gate line, a source-side select gate line and a p-type semiconductor substrate are set at a ground potential, and source lines, n-type wells, p-type wells, and a bit line that is not selected by the sense amplifier are in a floating state.
REFERENCES:
patent: 6005802 (1999-12-01), Takeuchi et al.
patent: 6031764 (2000-02-01), Imamiya et al.
patent: 6058044 (2000-05-01), Sugiura et al.
patent: 6301153 (2001-10-01), Takeuchi et al.
patent: 6330189 (2001-12-01), Sakui et al.
patent: 6353242 (2002-03-01), Watanabe et al.
patent: 6418058 (2002-07-01), Sakui et al.
patent: 6522583 (2003-02-01), Kanda et al.
patent: 6552950 (2003-04-01), Cho et al.
patent: 6847555 (2005-01-01), Toda
patent: 6927998 (2005-08-01), Takeuchi et al.
patent: 6967874 (2005-11-01), Hosono
patent: 7050346 (2006-05-01), Maejima et al.
patent: 7120057 (2006-10-01), Umezawa et al.
patent: 7245530 (2007-07-01), Ichikawa et al.
patent: 7272042 (2007-09-01), Nakai
patent: 7310270 (2007-12-01), Tanaka et al.
patent: 7420843 (2008-09-01), Hosono
patent: 7660157 (2010-02-01), Maejima et al.
patent: 7663919 (2010-02-01), Shibata et al.
patent: 2001-332093 (2001-11-01), None
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phan Trong
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