Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-16
2008-09-16
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000
Reexamination Certificate
active
11495245
ABSTRACT:
NAND architecture Flash memory strings, memory arrays, and memory devices are described that utilize continuous channel enhancement and depletion mode floating gate memory cells. Depletion mode floating gate memory cells allow for increased cell current through lower channel rdsresistance and decreased “narrow width” effect, allowing for increased scaling of NAND memory cell strings. In addition, the required voltages for reading and programming operations are reduced, allowing the use of more efficient, lower voltage charge pumps and a reduction circuit element feature sizes and layouts. Cell inhibit of unselected cells is also increased, reducing the likelihood of cell disturb in the memory array. Operation speed is improved by increasing read current of the selected NAND string and by increasing the ability to overcome the RC time constants of circuit lines and capacitances through lowered voltage swings and increased current supplies.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Pham Long
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