n-type wide bandgap semiconductors grown on a p-type layer to fo

Details n-type wide bandgap semiconductors grown on a p-type layer to fo n-type wide bandgap semiconductors grown on a p-type layer to fo

1995-04-07

1997-07-08

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 22, 257 87, 257 90, 257103, H01L 2906, H01L 3300

Patent

active

056464193

ABSTRACT:
n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same. In a preferred embodiment, a p-type gallium nitride substrate is used. A first layer, such as a magnesium zinc sulfide layer Mg.sub.x Zn.sub.1-x S is then deposited. Thereafter, a second layer such as an n-type zinc sulfide layer is deposited. The magnesium zinc sulfide layer forms an electron blocker layer, and preferably is adequately thick to prevent significant tunneling of electrons there through. Thus, the primary charge flow across the heterojunction is by way of holes injected into the n-type zinc sulfide region from the p-type gallium nitride region, resulting in electron-hole recombination in the zinc sulfide region to provide light emission in the wide bandgap zinc sulfide material. Alternate embodiments are disclosed.

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Fundamental Transition in the Electronic Nature of Solids, S. Kurtin et al., Physical Review Letters, vol. 22, No. 26, Jun. 30, 1969.
Poly (p-plenylenevinylene) light-emitting diodes: Enhanced electroluminescent efficiency through charge carrier confinement, A.R. Brown et al., Appl. Phys. Lett., 61 (23), Dec. 7, 1992.
3-4 .mu.m laser diodes based on GaInSb/InAs superlattices, R.H. Files et al., presented at "1995 Narrow Gap Semiconductor Conference", 1995.
Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors, F. Ren et al., Appl. Phys. Lett., 66 (12), Mar. 20, 1995.

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