Single electron transistor using protein

Details Single electron transistor using protein Single electron transistor using protein

1996-02-05

1997-07-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 20, 257 22, 257 23, 257 24, 257 25, 257 40, H01L 2906, H01L 31328, H01L 31336

Patent

active

056464207

ABSTRACT:
The single electron transistor can be operated at room temperature. The distance between the electrodes 5, 5 can be adjusted by the length of the protein and/or the wideness of the lipid bilayer and the distance between the quantum dot 4 and one of the electrodes 5 can be adjusted in units of 1.5 .ANG. by means of .alpha.-helix confirmation of a G segment of the protein.

REFERENCES:
patent: 5252719 (1993-10-01), Takeda et al.
patent: 5420746 (1995-05-01), Smith
patent: 5475341 (1995-12-01), Reed
Y. Wada et al., "Quantum transport in polycrystalline silicon `slit nano wire`", Appl. Phys. Lett. 65(5), Aug. 1, 1994, p. 624.

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