N-type semiconducting diamond, and method of making the same

Details N-type semiconducting diamond, and method of making the same N-type semiconducting diamond, and method of making the same

1989-06-22

1991-09-24

Hille, Rolf

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

357 7, 357 8, 357 34, 156DIG68, 423446, 437 1, 437 81, H01L 29280, H01L 29720, H01L 49020, H01L 21205

Patent

active

050517856

ABSTRACT:
N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile precursor compound for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond film in situ during its formation. By such in situ formation technique, shallow n-type impurity atoms, e.g., lithium, arsenic, phosphorous, scandium, antimony, bismuth, and the like, may be incorporated into the crystal lattice in a uniform manner, and without the occurrence of gross lattice asperities and other lattice damage artifacts which result from ion implanation techniques. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

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