N type impurity doping using implantation of P 2 + ions or...

Details N type impurity doping using implantation of P 2 + ions or... N type impurity doping using implantation of P 2 + ions or...

2006-01-03

2006-01-03

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S530000

Reexamination Certificate

active

06982215

ABSTRACT:
A method for using ion implantation to implant phosphorous or arsenic impurities into shallow source/drain regions or into polysilicon electrodes used in devices having shallow source/drain electrodes. A phosphorous source having an abundance of P2+ ions is used in an ion beam system adjusted to select P2+ ions. Since each ion contains two phosphorous atoms the ion beam requires twice the beam energy and half the beam density. This provides good wafer throughput and improved source life. An arsenic source having an abundance of As2+ ions can be substituted for the solid phosphorous source resulting in a beam of As2+ ions.

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S. Wolf, R. Tauber. Silicon Processing for the VLSI Era, vol. 1: Process Technology. Lattice Press, California, 1986. pp. 305-307.
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S.Wolf et al. “Silicon Processing for the VLSI Era” vol. 1 Lattice Press, Sunset Beach, CA, 1990, p 327.

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