Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-04-05
1995-05-30
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257192, H01L 2980, H01L 29207
Patent
active
054204429
ABSTRACT:
High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al.sub.x Ga.sub.1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al.sub.y Ga.sub.1-y As having a single Group V component, where x and y are each from 0 to 1.0. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.
REFERENCES:
patent: 4517047 (1985-05-01), Chang et al.
patent: 4607272 (1986-08-01), Osbourn
patent: 4780748 (1988-10-01), Cunningham et al.
patent: 4797716 (1989-01-01), Chaffin et al.
Patent Abstracts of Japan, "Two-Dimensional Electron Gas Field-Effect Transistor," F. Akio, JP900090602, May 4, 1990, NEC Corp.
Patent Abstracts of Japan, "High Electron Mobility Transistor," H. Yasumi, JP900053924, Jun. 3, 1990, Fujitsu Ltd.
Sunder et al., "Czochralski Growth and Characterization of GaSb", Journal of Crystal Growth, vol. 78, No. 9, 1986, pp. 9-18.
Dingle et al., "Electron mobilities in modulation-doped semiconductor hetero-junction superlattice", Applied Physics Letters, vol. 33, No. 7, Oct. 1, 1978, pp. 665-667.
Tuttle et al., "Effects of interface layer sequencing on the transport properties of InAs/AlSb: Evidence for antisite donors at the InAs/AlSb interface", Journal of Applied Physics, vol. 67, No. 6, Mar. 15, 1990, pp. 3032-3037.
Wang ed, Introduction to Semiconductor Technology-GaAs and Related Compounds, Chap. 2 by Shor, Chap. 3 by Pei et al., John Wiley & Sons, 1990, pp. 67-71 and 148-152.
Brown April S.
Hasenberg Thomas C.
Larson Lawrence E.
Denson-Low W. K.
Duraiswamy V. D.
Hardy David B.
Hughes Aircraft Company
Limanek Robert P.
LandOfFree
N-type antimony-based strained layer superlattice does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with N-type antimony-based strained layer superlattice, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-type antimony-based strained layer superlattice will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-364399