Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-25
1998-12-22
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257357, 257358, 257401, 257350, 257351, 257368, 257369, H01L 21335
Patent
active
058523154
ABSTRACT:
A MOS transistor cell is disclosed for a multiple cell MOS transistor, such as in an ESD protection circuit, output buffer, etc. The transistor cell has a regular n-sided polygonal geometry, wherein n.gtoreq.8. A drain region is provided in a substrate which occupies an area with n-sided polygonal shaped boundaries. Surrounding the drain, is a channel region which occupies an n-sided polygonal shaped area. Surrounding the channel region is a source region provided in the substrate which occupies an annular shaped area having n-sided polygonal boundaries.
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Ker Ming-Dou
Wang Kuo-Feng
Wu Tain-Shun
Abraham Fetsum
Thomas Tom
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