N,N′-di(arylalkyl)-substituted naphthalene-based...

Details N,N′-di(arylalkyl)-substituted naphthalene-based... N,N′-di(arylalkyl)-substituted naphthalene-based...

2011-07-19

2011-07-19

Phung, Anh (Department: 2824)

Semiconductor device manufacturing: process

Having organic semiconductive component

C257SE51006, C257SE51050

Reexamination Certificate

active

07981719

ABSTRACT:
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

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Theo J. Dingemans, et al., “Wholly Aromatic Ether-imides. Potential Materials for n-Type Semiconductors,” Chem. Mater. 2004, 16, 966-974.

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