N-gate transistor

Details N-gate transistor N-gate transistor

2005-11-01

2005-11-01

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S585000, C257S344000, C257S408000

Reexamination Certificate

active

06960517

ABSTRACT:
A n-gate transistor, and method of forming such, including source/drain regions connected by a channel region and a gate electrode coupled to the channel region. The channel region has many angled edges protruding into the gate electrode. The many angled edges are to act as electrically conducting channel conduits between source/drain regions.

REFERENCES:
patent: 4818715 (1989-04-01), Chao
patent: 4907048 (1990-03-01), Huang
patent: 4994873 (1991-02-01), Madan
patent: 5880015 (1999-03-01), Hata
patent: 6437550 (2002-08-01), Andoh et al.
Chau, Robert, et al., Advanced Depleted-Substrate Transistors: Single-gate, Double-gate and Tri-gate (Invited Paper), Components Research, Logic Technology.
Development, Intel Corporation, 5200 N.E. Elam Young Parkway, HIllsboro, OR 97124, Mail stop RA1-232, USA, 2 pages, no date.

Affiliated with

Also associated with

Rating

N-gate transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N-gate transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-gate transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3517328