N-drive or P-drive VCSEL array

Details N-drive or P-drive VCSEL array N-drive or P-drive VCSEL array

1998-02-09

2000-05-30

Sanghavi, Hemang

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372 50, H01S 319

Patent

active

060699086

ABSTRACT:
A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs.

REFERENCES:
patent: 5274655 (1993-12-01), Shieh et al.
patent: 5331658 (1994-07-01), Shieh et al.
patent: 5475701 (1995-12-01), Hibbs-Brenner
patent: 5831960 (1998-11-01), Jiang et al.

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