N-containing plasma etch process with reduced resist poisoning

Details N-containing plasma etch process with reduced resist poisoning N-containing plasma etch process with reduced resist poisoning

2005-01-25

2005-01-25

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S638000, C438S683000, C438S687000, C438S725000, C438S740000, C430S005000

Reexamination Certificate

active

06846749

ABSTRACT:
A method for forming a metal interconnect comprises exposing a dielectric layer to an etch chemistry containing nitrogen-containing compound such as NH3, NF3or N2O. The nitrogen-containing compound provides selectivity and/or profile control comparable to that provided by N2, while avoiding poisoning of photoresist by embedded N2.

REFERENCES:
patent: 4804636 (1989-02-01), Grover, III et al.
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5908319 (1999-06-01), Xu et al.
patent: 5935877 (1999-08-01), Autryve
patent: 6025116 (2000-02-01), Grassmann
patent: 6103456 (2000-08-01), Többen et al.
patent: 6130166 (2000-10-01), Yeh
patent: 6268294 (2001-07-01), Jang et al.
patent: 6316351 (2001-11-01), Chen et al.
patent: 6380084 (2002-04-01), Lim et al.
patent: 20020123226 (2002-09-01), Trapp

Affiliated with

Also associated with

Rating

N-containing plasma etch process with reduced resist poisoning does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N-containing plasma etch process with reduced resist poisoning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-containing plasma etch process with reduced resist poisoning will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3396364