N channel MOSFET with anti-radioactivity

Details N channel MOSFET with anti-radioactivity N channel MOSFET with anti-radioactivity

1994-09-16

1998-03-03

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257346, 257349, 257354, 257376, 257400, 257409, 257509, H01L 27108, H01L 2976, H01L 2701, H01L 2994

Patent

active

057238863

ABSTRACT:
The invention provides an n-channel MOS field effect transistor with an improved anti-radioactivity. Such transistor includes a p-type silicon substrate. An isolation oxide film is selectively formed on a surface of the p-type silicon substrate. Source and drain diffusion layers of n+-type are formed on first opposite sides of a channel region in the p-type silicon substrate. A gate made of polycrystalline silicon is formed over the channel region through a gate oxide film. Leak guard diffusion layers of p-type are formed on second opposite sides of the channel region in the p-type silicon substrate. The p-type leak guard diffusion layer has a junction surface to the isolation oxide film. The junction surface of the p-type leak guard diffusion layer and the isolation oxide film exists up to a level which is deeper than a depth of the n+-type source and drain diffusion layers.

REFERENCES:
patent: 5041887 (1991-08-01), Kumagai et al.
patent: 5045898 (1991-09-01), Chen et al.
patent: 5125007 (1992-06-01), Yamaguchi et al.
patent: 5164806 (1992-11-01), Nagatomo et al.

Affiliated with

Also associated with

Rating

N channel MOSFET with anti-radioactivity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N channel MOSFET with anti-radioactivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N channel MOSFET with anti-radioactivity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2251152