N-alkynyl polyvinylpyridinium resists having electron and deep U

Details N-alkynyl polyvinylpyridinium resists having electron and deep U N-alkynyl polyvinylpyridinium resists having electron and deep U

1984-04-03

1986-04-08

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430287, 430276, 5253271, 526263, 522149, 522151, G03C 168

Patent

active

045813183

ABSTRACT:
N-alkynyl polyvinylpyridinium resists, which are sensitive to both electrons and deep U.V., are disclosed.

REFERENCES:
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patent: 4312935 (1982-01-01), Engler et al.
patent: 4312936 (1982-01-01), Engler et al.
patent: 4338392 (1982-07-01), Engler et al.
King, H. N. G., "Electron Lithography", Solid State Technology, Feb. 1982, pp. 102-105.
Piwczyk, B. P., Williams, A. E., "Electron Beam Lithography for the 80s" Solid State Technology, Jun. 1982, pp. 74-82.
Thompson, L. F., "Design of Polymer Resists for Electron Lithography" Solid State Technology, Jul. 1974, pp. 27-28.
Thompson, L. F. and Kerwin, R. E., "Polymer Resist Systems for Photo- and Electron Lithography", Polymer Resist Systems, pp. 267-281 (1976).

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