Mushroom phase change memory having a multilayer electrode

Details Mushroom phase change memory having a multilayer electrode Mushroom phase change memory having a multilayer electrode

2007-06-22

2009-06-09

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S063000, C365S227000, C365S226000, C257S004000

Reexamination Certificate

active

07545668

ABSTRACT:
An integrated circuit includes a first electrode including at least two electrode material layers and a resistivity changing material including a first portion and a second portion. The first portion contacts the first electrode and has a same cross-sectional width as the first electrode. The second portion has a greater cross-sectional width than the first portion. The integrated circuit includes a second electrode coupled to the resistivity changing material.

REFERENCES:
patent: 7067837 (2006-06-01), Hwang et al.
patent: 2005/0030800 (2005-02-01), Johnson et al.
patent: 2005/0227496 (2005-10-01), Park et al.
patent: 2006/0113573 (2006-06-01), Cheong et al.
patent: 2007/0025226 (2007-02-01), Park et al.
patent: 2008/0191187 (2008-08-01), Lung et al.
patent: 2008/0316794 (2008-12-01), Philipp et al.
“A 0.1um 1.8V .256Mb 66MHz Synchronous Burst PRAM”, Sangbeom Kang, et al., IEEE International Solid-State Circuits Conference, 2006 (3 pgs.).
“Full Integration and Reliability Evaluation of Phase-Change RAM Based on .24um-CMOS Technologies”, Y.N. Hwang, et al., Symposium on VLSI Technology Digest of Technical Papers, 2003 (2 pgs.).
“Highly Manufacturable High Density Phase Change Memory of 64Mb and Beyond”, S.J. Ahn, et al., IEEE 2004 (4 pgs.).
“OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”, Stefan Lai, et al., Intel Corporation (4 pgs.).

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