Multizone heater for furnace

Electric heating – Heating devices – Combined with container – enclosure – or support for material...

Reexamination Certificate

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C219S405000, C219S411000, C392S416000, C392S418000, C118S724000, C118S725000, C118S050100

Reexamination Certificate

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07429717

ABSTRACT:
The present invention relates to an apparatus and method for heating a semiconductor processing chamber. One embodiment of the present invention provides a furnace for heating a semiconductor processing chamber. The furnace comprises a heater surrounding side walls of the semiconductor processing chamber, wherein the heater comprises a plurality of heating elements connected in at least two independently controlled zones, and a shell surrounding the heater.

REFERENCES:
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patent: 6307184 (2001-10-01), Womack et al.
patent: 6399923 (2002-06-01), Kano et al.
patent: 6496648 (2002-12-01), Mack et al.
patent: 6780251 (2004-08-01), Tometsuka
patent: 7027722 (2006-04-01), Uemori et al.
Metal Carbide Coatings on Graphite. “For Improved Performance in GaN and SiC Thin Film Equipment”.Pub. No. 85501 Rev. 2 (Sep. 2003).
Advanced Material Solutions. “Chemically Vapor Deposited Products”. Pub. No. 85506 (Aug. 2003).

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