Multivalue memory storage with two gating transistors

Details Multivalue memory storage with two gating transistors Multivalue memory storage with two gating transistors

2007-10-15

2009-10-27

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ternary

C365S149000, C365S189070

Reexamination Certificate

active

07609546

ABSTRACT:
Digital memory devices and systems, as well as methods of operating digital memory devices, that include a multivalue memory cell with a first and a second gating transistor arranged in parallel, having a first and a second node, respectively, coupled to a storage element, and sensing circuitry coupled to a third and a fourth node of the first and second gating transistors, respectively, to sense a stored voltage of the memory cell. In embodiments, the first and second gating transistors are configured to activate at different threshold voltage levels.

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patent: 2005/0289293 (2005-12-01), Parris et al.
International Search Report and Written Opinion mailed Feb. 3, 2009 in PCT/US2008/079420.

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