Multistep planarized chemical vapor deposition process with the

Details Multistep planarized chemical vapor deposition process with the Multistep planarized chemical vapor deposition process with the

1989-03-10

1990-10-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437235, 437236, 437240, 437247, 437982, 148DIG133, H01L 21461

Patent

active

049620630

ABSTRACT:
An improved planarization process is disclosed which comprises depositing over a patterned integrated circuit structure on a semiconductor wafer a conformal insulation layer by ECR plasma deposition of an insulation material. The ECR plasma deposition is carried out until the trenches or low regions between adjacent raised portions of the structure are completely filled with insulation material. A planarization layer of a low melting glass material, such as a boron oxide glass, is then flowed as it is deposited over the integrated circuit structure to a depth or thickness sufficient to cover the highest portions of the ECR plasma deposited insulation layer. This planarization layer is then anistropically etched back sufficiently to provide a planarized surface on the ECR plasma deposited insulation layer. A further layer of insulation material may then be conventionally CVD deposited over the planarized ECR plasma deposited insulation layer which acts to encapsulate any remaining portions of the planarizing layer.

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