Multiport single transistor bit cell

Details Multiport single transistor bit cell Multiport single transistor bit cell

2007-10-23

2007-10-23

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S903000, C257SE27098, C365S230050

Reexamination Certificate

active

11192956

ABSTRACT:
A multiport memory cell (200, 300, 600) includes a first word line (WL1) coupled to a gate electrode of a first transistor (201, 301, 601). A second word line (WL2) is coupled to a gate electrode of a second transistor (202, 302, 602). Importantly, the memory cell (200, 300, 600) includes a conductive path (215, 315) between an electrically floating body (426) of the first transistor (201) and an electrically floating body (426) of the second transistor (202). The first word line (WL1) may overlie a first portion of a common body (426) and the second word line (WL2) may overlie a second portion of the common body (426). The common body (426) may be positioned vertically between a buried oxide layer (427) and a gate dielectric layer (430) and laterally between first and second source/drain regions (401, 407) formed in a semiconductor layer (425). The cell (200, 300, 600) may include a third transistor (603) including a third word line (613) where the shared transistor body (610) is shared with the third transistor (603) and wherein the conductive path is connected to the third transistor (603).

REFERENCES:
patent: 5939740 (1999-08-01), Hashimoto et al.
patent: 6613615 (2003-09-01), Mandelman et al.
patent: 6714436 (2004-03-01), Burnett et al.
patent: 6781875 (2004-08-01), Ohsawa
Sakurai et al., Transparent-Refresh DRAM (TReD) Using Dual-Port DRAM Cell, IEEE 1988 CICC; pp. 4.3.1-4.3.4.
Okhonin et al., A Capacitor-Less 1T-DRAM Cell, IEEE EDL, vol. 23, No. 2, Feb. 2002.

Affiliated with

Also associated with

Rating

Multiport single transistor bit cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiport single transistor bit cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiport single transistor bit cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3835853