Multiplexer structure with interdigitated gates and shared...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S350000, C438S152000, C438S153000, C438S154000, C438S155000, C438S156000

Reexamination Certificate

active

06917074

ABSTRACT:
A multiplexer structure includes a semiconductor substrate having a shared diffusion region. A first gate having a first finger and a second finger is disposed on the shared diffusion region, and a second gate having a first finger and a second finger is disposed on the shared diffusion region. A contact for a first input node is disposed on the shared diffusion region between the first and second fingers of the first gate, and a contact for a second input node is disposed on the shared diffusion region between the first and second fingers of the second gate. A contact for a collector node is disposed on the shared diffusion region between the first and second gates. In operation, closing the first gate electrically connects the first input node and the collector node, and closing the second gate electrically connects the second input node and the collector node.

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patent: 6197671 (2001-03-01), Bergemont
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Cetiner, B.A. (2002) “Global Modeling Approach for Pre-Matched Multifinger FET,”Microwave and optical tech. letters, (32):174-178.
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Rabaey, Jan M. et al. (2003). “Digital Integrated Circuits: A Design Perspective” Chapter 9 InCoping with Interconnect. C.G. Sodini ed., Prentice-Hall of India, pp. 456-457.
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